N-Channel Enhancement Mode MOSFET
T2N7002H
Features
Low on-resistance
ESD protected gate up to 2kV HBM
High-speed switching
T2N7002H
SOT-23
T2N7002HW
SOT-323
Drive circuits can be simple
Parallel use is easy
Halogen free
Qualified to AEC-Q101 standards for high reliability
Typical Applications
N-channel enhancement mode effect transistor
Switching application
T2N7002HT
SOT-523
T2N7002HL
DFN1006-3
Mechanical Data
Case: SOT-23, SOT-323, SOT-523, DFN1006-3, SOT-723
Molding Compound, UL Flammability Classification Rating
94V-0
T2N7002HM
SOT-723
Terminals: Matte Tin Plated Leads, Solderable Per MIL-
STD-202, Method 208
Ordering Information
Part Number
Package
Shipping
Marking Code
T2N7002H
T2N7002HW
T2N7002HT
T2N7002HL
T2N7002HM
SOT-23
SOT-323
SOT-523
DFN1006-3
SOT-723
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
10000 pcs / Tape & Reel
10000 pcs / Tape & Reel
7002K
RKS
7002K
72
72
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
Value
Units
VDSS
VGSS
ID
60
V
Gate -Source Voltage
±20
V
Continuous Drain Current
300
mA
mA
mJ
Pulsed Drain Current (tp = 10μs)
Single Pulse Avalanche Energy *2
IDM
2000
0.11
0.35
EAS
SOT-23
SOT-323
SOT-523
DFN1006-3
SOT-723
0.25
0.15
0.15
0.15
Power Dissipation
PD
W
MTM0004A: August 2023 [2.8]
www.gmesemi.com
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