T0610H-6A
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
7
P(W)
10
123℃
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
0
25
50
75
100
125
150
IT(RMS)(A)
TC(℃)
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
I
TSM(A)
ITM(A)
100
10
1
70
60
50
40
30
20
10
0
Tj=25℃ typ
Tj=25℃ max
Tj=150℃ typ
Tc=25℃,tp=20ms,one cycle,sine
0
0.5
1
1.5
2
2.5
3
3.5
1.E+0
1.E+1
1.E+2
Number of cycles
1.E+3
1.E+4
1.E+5
V
TM(V)
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponding value of I2t (dI/dt<50A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
I
GT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
ITSM(A), I2t(A2s)
1000
3
IGT(I/II)&IH
IGT(III)
IL
ITSM
2.5
2
dI/dt
100
1.5
1
I2t
10
0.5
0
1
‐40
‐20
0
20
40
60
80
100 120 140 160
0.01
0.1
1
10
Tj(℃)
tp(ms)
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