Datasheet > SW6N90D

SW6N90D

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	752K
描述
TO-220F,TO-262N

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SW6N90D 数据手册

SW6N90D

N-channel Enhanced mode TO-220F/TO-262N MOSFET

TO-262N

TO-220F

Features

BV_DSS: 900V

I_D: 6A

 High ruggedness

 Low R_DS(ON)(Typ 1.8Ω)@V_GS=10V

 Low Gate Charge (Typ 42nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:UPS, LED, SMPS

_DS(ON):1.8Ω

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 6N90D

SW J 6N90D

Marking

Package

Packaging

SW6N90D

TO-220F

TO-262N

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-262N

V_DSS

I_D

Drain to source voltage

900

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

3.8*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

517

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

19.5

0.16

186.6

1.5

P_D

_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-262N

0.67

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

6.4

^oC/W

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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