Datasheet > SW6N65D

SW6N65D

更新时间： 2024-04-09 19:01:01

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	741K
描述
TO-252

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SW6N65D 数据手册

SW6N65D

N-channel Enhanced mode TO-252 MOSFET

TO-252

BV_DSS: 650V

I_D: 6A

Features

 High ruggedness

_DS(ON): 1.3Ω

 Low R_DS(ON)(Typ 1.3Ω)@V_GS=10V

 Low Gate Charge (Typ 22nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Charger

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW D 6N65D

SW6N65D

TO-252

REEL

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

650

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

3.8*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

147

V/ns

E_AR

dv/dt

236

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

P_D

T_STG, T_J

T_L

1.9

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Thermal resistance, Junction to case

Value

0.53

Unit

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

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