Datasheet > STK12C68-5CF25M

STK12C68-5CF25M

更新时间： 2024-02-14 17:50:01

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
13页	371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

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中文翻译

获取价格

数据手册

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STK12C68-5CF25M 数据手册

STK12C68

AutoStore™/POWER-UP RECALL

(V_CC= 5.0V ± 10%)^e

SYMBOLS

STK12C68

NO.

PARAMETER

UNITS NOTES

Standard

Alternate

MIN

MAX

550

Power-up RECALL Duration

STORE Cycle Duration

µs

RESTORE

STORE

VSBL

p, q, t

HLHZ

BLQZ

Low Voltage Trigger (V

) to HSB Low

300

SWITCH

Time Allowed to Complete SRAM Cycle

Low Voltage Trigger Level

DELAY

4.0

4.5

3.9

SWITCH

RESET

Low Voltage Reset Level

Note s: t_RESTOREstarts from the time V_CCrises above V_SWITCH

Note t: HSB is asserted low for 1µs when V_CAPdrops through V_SWITCH. If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB

will be released and no STORE will take place.

AutoStore™/POWER-UP RECALL

SWITCH

RESET

AutoStore

POWER-UP RECALL

VSBL

STORE

RESTORE

HSB

DELAY

DQ (DATA OUT)

POWER-UP

RECALL

BROWN OUT

NO STORE

(NO SRAM WRITES)

BROWN OUT

AutoStore™

BROWN OUT

AutoStore™

NO RECALL

RECALL WHEN

(V DID NOT GO

RETURNS

BELOW V

)

BELOW V

)

ABOVE V

SWITCH

RESET

October 2003

Document Control # ML0008 rev 0.4

1...3 4 567 8 9...13

中文翻译

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与STK12C68-5CF25M相关器件

型号	品牌	获取价格	描述	数据表
STK12C68-5CF35	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF35I	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF35M	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF45	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF45I	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF45M	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF55	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF55I	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5CF55M	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-5K25	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No