Datasheet > ST083S08MFN0PBF

ST083S08MFN0PBF

更新时间： 2023-02-26 13:29:02

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	171K
描述
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, TO-94, 3 PIN

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ST083S08MFN0PBF 数据手册

ST083SPbF Series

Vishay High Power Products

Inverter Grade Thyristors (Stud Version), 85 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

TO-209AC (TO-94)

TYPICAL APPLICATIONS

• Inverters

PRODUCT SUMMARY

• Choppers

I_T(AV)

85 A

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

°C

I_T(AV)

T_C

I_T(RMS)

135

50 Hz

60 Hz

50 Hz

60 Hz

2450

I_TSM

2560

I²t

kA²s

_DRM/V_RRM

400 to 1200

10 to 20

- 40 to 125

t_q

Range

μs

°C

T_J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

_DRM/V_RRM, MAXIMUM

V_RSM, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

I_DRM/I_RRMMAX.

AT T_J= T_JMAX.

VOLTAGE

TYPE NUMBER

REPETITIVE PEAK VOLTAGE

CODE

400

800

500

900

ST083S

1000

1200

1100

1300

Document Number: 94334

Revision: 25-Nov-09

For technical questions, contact: indmodules@vishay.com

www.vishay.com

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ST083S08PCL1PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
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