Datasheet > ST083S04PFL1PBF

ST083S04PFL1PBF

更新时间： 2023-02-26 14:58:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	126K
描述
Silicon Controlled Rectifier, 135A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC

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ST083S04PFL1PBF 数据手册

ST083S Series

Bulletin I25185 rev. B 03/94

2200

2000

1800

1600

1400

1200

1000

2600

2400

2200

2000

1800

1600

1400

1200

1000

At Any Ra te d Lo a d C o nd itio n And With

Ra te d V Ap p lie d Fo llo win g Surg e .

Ma xim um No n Re p e titive Surg e Curre nt

Ve rsus Pulse Tra in Dura tion . C ontro l

O f Co nd uc tion Ma y Not Be Ma inta ine d .

RRM

Initia l T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Initia l T = 125°C

No Vo lta g e Re a p p lie d

Ra te d V

Re a p p lie d

RRM

ST083S Se rie s

0.01

0.1

100

Numb e r O f Eq u a l Amp litud e Ha lf C yc le Cu rre nt Pulse s (N)

Pulse Tra in Dura tio n (s)

Fig. 5 - Maximum Non-repetitive Surge Current

Fig. 6 - Maximum Non-repetitive Surge Current

10000

Ste a d y Sta te Va lue

= 0.195 K/W

thJ C

(DC O p e ra tion )

T = 25°C

0.1

1000

T = 125°C

ST083S Se rie s

0.01

100

0.001

0.01

0.1

1.5

2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Sq ua re Wa ve Pulse Dura tio n (s)

Insta n ta n e ous O n-sta te Vo lta g e (V)

Fig. 8 - Thermal Impedance Z_thJCCharacteristic

Fig. 7 - On-state Voltage Drop Characteristics

160

140

120

100

120

110

100

= 500 A

ST083S Se rie s

T = 125 °C

300 A

200 A

100 A

300 A

200 A

50 A

100 A

50 A

ST083S Se rie s

T = 125 °C

10 20 30 40 50 60 70 80 90 100

Ra te O f Fa ll O f On-sta te Curre nt - d i/ d t (A/ µs)

Ra te Of Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 10 - Reverse Recovery Current Characteristics

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1...4 5 678 9

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