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SS4913ESOT PDF预览

SS4913ESOT

更新时间: 2024-02-20 04:06:13
品牌 Logo 应用领域
SECELECTRONICS 开关
页数 文件大小 规格书
8页 225K
描述
CMOS Omnipolar High Sensitivity Micropower Hall Switch

SS4913ESOT 数据手册

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SS4913  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Features  
Micropower consumption for battery powered applications  
Omnipolar, output switches with absolute value of North or South pole from magnet  
Operation down to 2.5V  
High sensitivity for direct reed switch replacement applications  
3 pin SOT23 (suffix SO)  
General Description:  
The SS4913 Omnipolar Hall effect sensor IC is fabricated  
from mixed signal CMOS technology .It incorporates  
advanced chopper-stabilization techniques to provide accurate  
and stable magnetic switch points.  
against the predefined thresholds. If the flux density is above  
or below the Bop/Brp thresholds then the output transistor is  
driven to change states accordingly. While in the “Sleep” cycle  
the output transistor is latched in its previous state. The design  
has been optimized for service in applications requiring  
extended operating lifetime in battery powered systems.  
The output transistor of the SS4913 will be latched on (Bop) in  
the presence of a sufficiently strong South or North magnetic  
field facing the marked side of the package. The output will be  
latched off (Brp) in the absence of a magnetic field.  
The circuit design provides an internally controlled clocking  
mechanism to cycle power to the Hall element and analog  
signal processing circuits. This serves to place the high  
current-consuming portions of the circuit into a “Sleep” mode.  
Periodically the device is “Awakened” by this internal logic  
and the magnetic flux from the Hall element is evaluated  
Applications  
Solid state switch  
Handheld Wireless Handset Awake Switch  
Lid close sensor for battery powered devices  
Magnet proximity sensor for reed switch replacement in low duty cycle applications  
1
V2.00 Mayr 1, 2012  

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