Datasheet > SP6102AE3

SP6102AE3

更新时间： 2024-01-17 15:05:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	536K
描述
Trans Voltage Suppressor Diode, 500W, 5.2V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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技术参数
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SP6102AE3 技术参数

生命周期：	Obsolete	包装说明：	O-LALF-W2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
其他特性：	HIGH RELIABILITY	最小击穿电压：	6.12 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-LALF-W2	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	BIDIRECTIONAL
最大功率耗散：	2 W	最大重复峰值反向电压：	5.2 V
表面贴装：	NO	技术：	AVALANCHE
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

SP6102AE3 数据手册

1N6102 thru 1N6137A

and 1N6138 thru 1N6173A

Voidless-Hermetically-Sealed Bidirectional

Transient Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This series of industry recognized voidless-hermetically-sealed Bidirectional Transient

Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-19500/516 and are

ideal for high-reliability applications where a failure cannot be tolerated. They provide

a Working Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package

sizes for 500 W and 1500 W ratings. They are very robust in hard-glass construction

and also use an internal metallurgical bond identified as Category I for high reliability

applications. Both of these are also military qualified to MIL-PRF-19500/516. These

devices are available as both a non-suffix part and an “A” suffix part involving different

voltage tolerances as further described in note 4 on page 2. These devices are also

available in a surface mount MELF package configuration by adding a “US” suffix (see

separate data sheet for 1N6102US thru 1N6173AUS). Microsemi also offers

numerous other TVS products to meet higher and lower peak pulse power and voltage

ratings in both through-hole and surface-mount packages.

“E” Package

“G” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

•

Military and other high reliability transient

transient voltage protection for sensitive circuits

protection

•

Triple-layer passivation

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/516 by adding JAN, JANTX, or JANTXV

prefix (consult factory for 1N6102 and 1N6138)

JANS available for 1N6103A thru 1N6118A per MIL-

PRF-19500/516 as well as further options for screening

in accordance with MIL-PRF-19500 for JANS on all

others in this series by using a “SP” prefix, e.g.

SP6119A, SP6143A, etc.

•

Extremely robust construction

Extensive range in Working Peak “Standoff”

Voltage (V_WM) from 5.2 to 152 V

Available as either 500 W or 1500 W Peak Pulse

Power (P_PP) using two different size packages

•

ESD and EFT protection per IEC6100-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels

in IEC61000-4-5

Flexible axial-leaded mounting terminals

•

Nonsensitive to ESD per MIL-STD-750 Method

Surface Mount equivalents are also available in a

square-end-cap MELF configuration with a “US” suffix

(see separate data sheet)

1020

•

Inherently radiation hard as described in

Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

Peak Pulse Power at 25^oC: 500 Watts for 1N6102 to

1N6137A and 1500 Watts for 1N6138 to 1N6173A @

10/1000 µs (also see Figures 1,2 and 3)

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over copper except for JANS with solid

Silver (Ag) and no finish

•

Impulse repetition rate (duty factor): 0.01%

•

MARKING: Body painted and part number, etc.

Steady-State Power: 3.0 W for 1N6102 to 1N6137A and

5.0 W for 1N6138 to 1N6173A @ T_L= 75^oC @3/8 inch

lead length from body (see Figure 4)

POLARITY: No polarity marking for these

bidirectional TVSs

•

Steady-State Power: 2.0 W for 1N6102 to 1N6137A and

3.0 W for 1N6138 to 1N6173A @ T_A=25^oC (see note

below and Figure 5)

•

Tape & Reel option: Standard per EIA-296

Weight: 750 mg for 500 Watt (E Package)

1270 mg for 1500 Watt (G Package)

Thermal Resistance @ 3/8 inch lead length:

•

See package dimensions on last page for both

33.5 ^oC/W for 1N6102 to 1N6137A and 20.0 ^oC/W for

1N6138 thru 1N6173A

the “E” and “G” size packages

•

Solder Temperatures: 260^oC for 10 s (maximum)

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_OPor T_J(MAX)is not exceeded.

10-08-2004 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SP6102AE3相关器件

型号	品牌	获取价格	描述	数据表
SP6102E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5.2V V(RWM), Bidirectional, 1 Element, Silicon, HERM
SP-6110		获取价格	IntelÂ® Queensbay processor on board ( 1.0GHz
SP6110PBF	INFINEON	获取价格	Transistor Output SSR, 1-Channel, 4000V Isolation, MR4, 4 PIN
SP-6112		获取价格	IntelÂ® Queensbay processor on board ( 1.0GHz
SP-6118		获取价格	IntelÂ® Queensbay processor on board ( 1.0GHz
SP6119	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 1 Element, Silicon, HER
SP6119A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 1 Element, Silicon, HER
SP6119AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 1 Element, Silicon, HER
SP6119E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 1 Element, Silicon, HER
SP6120	SIPEX	获取价格	Low Voltage, AnyFETTM, Synchronous,Buck Controller Ideal for 2A to 10A, High Performance,

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