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SMCJ13 PDF预览

SMCJ13

更新时间: 2024-02-22 06:52:10
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
7页 1324K
描述
SMC Plastic-Encapsulate Diodes

SMCJ13 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AB包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:43 weeks 2 days风险等级:5.16
Is Samacsys:N最小击穿电压:14.4 V
最大钳位电压:27.2 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:6.5 W认证状态:Not Qualified
最大重复峰值反向电压:13 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SMCJ13 数据手册

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SMCJ SERIES  
SMC Plastic-Encapsulate Diodes  
Transient Voltage Suppressor Diodes  
Features  
PPP  
VRWM  
1500W  
5.0V- 440V  
SMC  
Glass passivated chip  
Applications  
Clamping Voltage  
Marking  
SMCJ  
XXCA/XXA/XX  
Bi-directional  
Uni-direction  
:
XX From 5.0 To 440  
Max  
1500  
Item  
Symbol Unit  
Conditions  
Peak power dissipation  
PPPM  
W
A
with a 10/1000us waveform  
with a 10/1000us waveform  
On infinite heat sink at TL=75  
Peak pulse current  
Power dissipation  
IPPM  
See Next Table  
6.5  
W
PD  
Peak forward surge current(2)  
IFSM  
A
200  
8.3 ms single half sine-wave unidirectional only  
Operating junction and  
storage temperature range  
TJ,TSTG  
-55 to +150  
Electrical CharacteristicsT =25Unless otherwise specified)  
a
Item  
Max  
Symbol Unit  
Conditions  
Maximum instantaneous forward  
Voltage (3)  
at 100A for unidirectional only  
VF  
V
3.5/5.0  
junction to lead  
RθJL  
RθJA  
/W  
/W  
75  
15  
Thermal resistance  
junction to ambient  
Notes:  
(1)  
Non-repetitive current pulse, per Fig. 3 and derated above TA= 25per Fig.2.  
Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal  
VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
(2)  
(3)  
1
H
igh Diode Semiconductor  

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