Datasheet > SMBJ8.0A-E3

SMBJ8.0A-E3

更新时间： 2024-02-25 23:24:11

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
5页	89K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor

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技术参数
数据手册

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SMBJ8.0A-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.09
其他特性：	UL RECOGNIZED	最大击穿电压：	9.83 V
最小击穿电压：	8.89 V	击穿电压标称值：	9.3 V
最大钳位电压：	13.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	8 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

SMBJ8.0A-E3 数据手册

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

P_PPM

600 W

100 A

_FSM(uni-directional only)

T_Jmax.

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

TYPICAL APPLICATIONS

Base P/N-M3

commercial grade

- halogen-free, RoHS compliant, and

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 14-Mar-12

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SMBJ8.0A-E3相关器件

型号	品牌	获取价格	描述	数据表
SMBJ8.0A-E3/2C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ8.0A-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0A-E3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ8.0AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0AE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0AE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ8.0AE3TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ8.0A-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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