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SM8S20AHE3_A/I

更新时间： 2024-02-29 11:58:28
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 100K
描述
Trans Voltage Suppressor Diode, 5200W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAGE-1

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SM8S20AHE3_A/I 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-C1Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.69其他特性：HIGH RELIABILITY, PD-CASE
最大击穿电压：24.5 V最小击穿电压：22.2 V
外壳连接：ANODE配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-218ABJESD-30 代码：R-PSSO-C1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：5200 W元件数量：1
端子数量：1最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245极性：UNIDIRECTIONAL
最大功率耗散：8 W参考标准：AEC-Q101
最大重复峰值反向电压：20 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：SINGLE
处于峰值回流温度下的最长时间：30Base Number Matches：1

SM8S20AHE3_A/I 数据手册

 浏览型号SM8S20AHE3_A/I的Datasheet PDF文件第2页浏览型号SM8S20AHE3_A/I的Datasheet PDF文件第3页浏览型号SM8S20AHE3_A/I的Datasheet PDF文件第4页浏览型号SM8S20AHE3_A/I的Datasheet PDF文件第5页 
SM8S10 thru SM8S43A  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design passivated  
anisotropic rectifier technology  
• TJ = 175 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• Low leakage current  
• Low forward voltage drop  
DO-218AB  
• High surge capability  
• Meets ISO7637-2 surge specification (varied by test  
condition)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VBR  
11.1 V to 52.8 V  
TYPICAL APPLICATIONS  
P
PPM (10 x 1000 μs)  
6600 W  
5200 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection application.  
P
PPM (10 x 10 000 μs)  
PD  
8 W  
VWM  
10 V to 43 V  
700 A  
IFSM  
MECHANICAL DATA  
Case: DO-218AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ..., revision code only  
applicable for part number with 5 % tolerance)  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional  
DO-218AB  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: heatsink is anode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
6600  
UNIT  
with 10/1000 μs waveform  
Peak pulse power dissipation  
W
with 10/10 000 μs waveform  
5200  
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)  
Peak pulse current with 10/1000 μs waveform  
PD  
8.0  
W
A
(1)  
IPPM  
See next table  
700  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
-55 to +175  
°C  
Note  
(1)  
Non-repetitive current pulse derated above TA = 25 °C  
Revision: 31-Aug-16  
Document Number: 88387  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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