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SL2364 PDF预览

SL2364

更新时间: 2024-02-11 17:40:34
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
2页 26K
描述
VERY HIGH PERFORMANCE TRANSISTOR ARRAYS

SL2364 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.69Base Number Matches:1

SL2364 数据手册

 浏览型号SL2364的Datasheet PDF文件第2页 
ADVANCE INFORMATION  
DS 3305 -2.0  
SL2364  
VERY HIGH PERFORMANCE TRANSISTOR ARRAYS  
TheSL2364isanarrayoftransistorsinternallyconnected  
to form a dual long-tailed pair with tail transistors. This is a  
monolithic integrated circuit manufactured on a very high  
speed bipolar process which has a minimum useable fT of  
2.5GHz, (typically 5GHz).  
The SL2364 is in a 14 SO package and a high  
performance Dilmon encapsulation.  
14  
13  
12  
11  
10  
9
8
Q3  
Q4  
Q5  
Q6  
Q1  
Q2  
SUB  
4
FEATURES  
1
2
3
5
6
7
Complete Dual Long-Tailed Pair in One Package  
Very High fT - Typically 5 GHz  
Very Good Matching Including Thermal Matching  
SL2364C  
DC14  
MP14  
APPLICATIONS  
Fig. 1 Pin connections (top view)  
Wide Band Amplification Stages  
140 and 560 MBit PCM Systems  
Fibre Optic Systems  
High Performance Instrumentation  
Radio and Satellite Communications  
ELECTRICAL CHARACTERISTICS  
These characteristics are guaranteed of the following conditions (unless otherwise stated):  
Tamb = 22°C ±2°C  
Value  
Characteristics  
Units  
Conditions  
Min.  
Max.  
Typ.  
IC = 10µA  
IC = 5mA  
IE = 10µA  
IC = 10µA  
BVCBO  
LVCEO  
BVEBO  
BVCIO  
hFE  
10  
6
V
V
V
V
20  
9
2.5  
16  
50  
2.5  
5.0  
40  
80  
5
IC = 8mA, VCE = 2V  
IC Tail) = 8mA, VCE = 2V  
IC Tail) = 8mA, VCE = 2V  
IC Tail) = 8mA, VCE = 2V  
VCB = 0  
fT  
GHz  
mV  
VBE (See note 1)  
5
2
VBE / TAMB  
CCB  
mV/°C  
pF  
-1.7  
0.5  
1.0  
0.8  
1.5  
VCI = 0  
CCI  
pF  
NOTE 1. VBE applies to | VBEQ3 - VBEQ4 | and | VBEQ5 - VBEQ6  
|

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