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SHF-0198 PDF预览

SHF-0198

更新时间: 2024-02-23 16:38:25
品牌 Logo 应用领域
STANFORD /
页数 文件大小 规格书
3页 73K
描述
DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET

SHF-0198 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, S-CDFM-F2Reach Compliance Code:unknown
风险等级:5.92外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:10 V
FET 技术:HETERO-JUNCTION最高频带:X BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最小功率增益 (Gp):12 dB
认证状态:Not Qualified子类别:FET RF Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

SHF-0198 数据手册

 浏览型号SHF-0198的Datasheet PDF文件第1页浏览型号SHF-0198的Datasheet PDF文件第3页 
SHF-0198 DC-12 GHz 0.5 Watt HFET  
Typical Performance at 25° C (Vds = 9V, Ids = 150mA)  
|S21| and MAG vs. Frequency  
|S11| vs. Frequency  
0
30  
25  
20  
15  
10  
5
-5  
MAG  
S21  
-10  
-15  
-20  
dB  
dB  
0
DC  
2
4
6
8
10  
12  
DC  
2
4
6
8
10  
12  
GHz  
GHz  
|S22| vs. Frequency  
|S12| vs. Frequency  
0
-5  
0
-20  
-10  
-15  
-20  
dB  
dB  
-40  
-60  
0
2
4
6
8
10  
12  
DC  
2
4
6
8
10  
12  
GHz  
GHz  
TOIP vs. Frequency  
39  
38  
37  
36  
35  
34  
dBm  
0
2
4
6
8
10  
12  
GHz  
Typical S-Parameters Vds = 9.0V, Id = 150mA  
F r e q G H z  
.1 0 0  
|S 1 1 |  
0 . 8 9 1  
0 . 9 2 8  
0 . 8 8 8  
0 . 8 0 4  
0 . 8 1 3  
0 . 8 0 4  
0 . 8 4 6  
0 . 9 1 4  
0 . 9 1 7  
0 . 9 2 6  
0 . 9 6 7  
0 . 9 7 0  
0 . 9 3 7  
0 . 9 0 6  
S 1 1 A n g  
-1 2  
|S 2 1 |  
11 .8 2  
1 0 .8 4  
9 . 4 4  
7 . 9 4  
5 . 6 9  
3 . 9 8  
2 . 7 6  
2 . 0 2  
1 . 6 6  
1 . 4 5  
1 . 3 7  
1 . 3 3  
1 . 3 8  
1 . 3 3  
S 2 1 A n g  
1 7 7  
1 5 0  
1 2 2  
9 7  
|S 1 2 |  
S 1 2 A n g  
8 9  
|S 2 2 |  
.5 3 9  
.5 2 9  
.4 7 7  
.4 6 8  
.4 9 3  
.5 3 1  
.6 0 3  
.6 7 0  
.8 2 2  
.8 0 2  
.9 4 2  
.9 4 7  
.9 5 2  
.8 7 9  
S 2 2 A n g  
-4  
.0 0 5  
.0 2 3  
.0 3 7  
.0 4 3  
.0 4 9  
.0 5 3  
.0 7 4  
.0 9 2  
.1 3 7  
.11 5  
.2 0 5  
.1 6 7  
.1 8 6  
.2 0 7  
.5 0 0  
-6 4  
7 0  
-2 7  
1 . 0 0  
-9 7  
6 3  
-4 8  
2 . 0 0  
-1 3 8  
-1 6 7  
1 7 2  
1 5 5  
1 3 7  
11 9  
1 0 1  
8 7  
4 7  
-7 4  
3 . 0 0  
7 0  
4 4  
-1 0 3  
-1 2 3  
-1 4 5  
-1 5 9  
1 4 7  
1 4 8  
1 3 2  
1 0 0  
8 9  
4 . 0 0  
5 2  
6 0  
5 . 0 0  
3 5  
6 5  
6 . 0 0  
2 0  
6 9  
7 . 0 0  
-1  
5 8  
8 . 0 0  
-4  
6 0  
9 . 0 0  
-11  
-3 4  
-3 1  
-3 8  
5 6  
1 0 .0 0  
1 1 .0 0  
1 2 .0 0  
6 5  
4 1  
5 4  
4 2  
2 1  
3 9  
5 1  
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
3-22  

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