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SGA-4563 PDF预览

SGA-4563

更新时间: 2024-01-24 04:03:15
品牌 Logo 应用领域
SIRENZA 放大器射频微波
页数 文件大小 规格书
5页 258K
描述
DC-2500 MHz, Cascadable SiGe HBT MMIC Amplifier

SGA-4563 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:TSSOP6,.08
Reach Compliance Code:unknown风险等级:6.97
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:15.3 dB
最大输入功率 (CW):18 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:6最大工作频率:2500 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP6,.08电源:3.6 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:49 mA表面贴装:YES
技术:BIPOLAR端子面层:Matte Tin (Sn)
最大电压驻波比:1.9Base Number Matches:1

SGA-4563 数据手册

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SGA-4563  
RoHS Compliant  
& Green Package  
Product Description  
The SGA-4563 is a high performance SiGe HBT MMIC Amplifier.  
A Darlington configuration featuring 1 micron emitters provides  
Pb  
SGA-4563Z  
DC-2500 MHz, Cascadable  
SiGe HBT MMIC Amplifier  
high F and excellent thermal perfomance. The heterojunction  
T
increases breakdown voltage and minimizes leakage current  
between junctions. Cancellation of emitter junction non-  
linearities results in higher suppression of intermodulation  
products. Only 2 DC-blocking capacitors, a bias resistor and an  
optional RF choke are required for operation.  
The matte tin finish on Sirenza’s lead-free package utilizes a  
post annealing process to mitigate tin whisker formation and is  
RoHS compliant per EU Directive 2002/95. This package is also  
manufactured with green molding compounds that contain no  
antimony trioxide nor halogenated fire retardants.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
blocking capacitors, a bias resistor and an optional RF choke are  
required for operation.  
• High Gain : 20.2 dB at 1950 MHz  
• Cascadable 50 Ohm  
Gain & Return Loss vs. Frequency  
VD= 3.5 V, ID= 45 mA (Typ.)  
• Operates From Single Supply  
• Low Thermal Resistance Package  
32  
24  
16  
8
0
GAIN  
-10  
-20  
-30  
-40  
Applications  
ORL  
IRL  
• PA Driver Amplifier  
• Cellular, PCS, GSM, UMTS  
• IF Amplifier  
• Wireless Data, Satellite  
0
0
1
2
3
4
5
6
Frequency (GHz)  
Symbol  
Parameter  
Small Signal Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
2400 Mhz  
25.6  
20.2  
18.6  
G
dB  
850 MHz  
1950 MHz  
15.0  
12.8  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
850 MHz  
1950 MHz  
27.1  
26.2  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (>10dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
2500  
19.9  
10.1  
2.4  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
NF  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
3.6  
VD  
Device Operating Current  
mA  
41  
45  
49  
ID  
Thermal Resistance (junction to lead)  
°C/W  
255  
RTH  
,
j-l  
VS = 8 V  
RBIAS = 100 Ohms TL = 25ºC  
ID = 45 mA Typ.  
OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm  
ZS = ZL = 50 Ohms  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101803 Rev. D  

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