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SGA4586ZPCK1 PDF预览

SGA4586ZPCK1

更新时间： 2024-11-18 01:06:59
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
6页 286K
描述
DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

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中文翻译

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SGA4586ZPCK1 数据手册

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SGA4586ZDC  
to 4000MHz,  
Cascadable  
SiGe HBT  
MMIC Ampli-  
fier  
SGA4586Z  
DC to 4000MHz, CASCADABLE SiGe HBT  
MMIC AMPLIFIER  
Package: SOT-86  
Product Description  
Features  
The SGA4586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-  
figuration featuring one-micron emitters provides high FT and excellent thermal per-  
High Gain: 17.9dB at  
1950MHz  
formance. The heterojunction increases breakdown voltage and minimizes leakage  
current between junctions. Cancellation of emitter junction non-linearities results in  
higher suppression of intermodulation products. Only two DC-blocking capacitors, a  
bias resistor, and an optional RF choke are required for operation.  
Cascadable 50Ω  
Operates from Single Supply  
Low Thermal Resistance  
Package  
Applications  
Optimum Technology  
Matching® Applied  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
Gain & Return Loss vs. Freq. @TL=+25°C  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
32.0  
24.0  
16.0  
8.0  
0.0  
GAIN  
IRL  
-10.0  
-20.0  
-30.0  
-40.0  
Wireless Data, Satellite  
ORL  
GaAs pHEMT  
Si CMOS  
0.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Si BJT  
Frequency (GHz)  
GaN HEMT  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
22.0  
Typ.  
24.0  
17.9  
16.3  
16.5  
13.7  
28.6  
27.7  
4000  
Max.  
26.5  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
850MHz  
1950MHz  
>10dB  
Output Power at 1dB Compression  
Output Third Intercept Point  
Bandwidth Determined by Return  
Loss (>10dB)  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
(Junction - Lead)  
19.4  
21.5  
1.9  
3.6  
45  
dB  
dB  
dB  
1950MHz  
1950MHz  
1950MHz  
V
41  
49  
mA  
°C/W  
97  
Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P  
per tone=-5dBm, R  
=100Ω, T =25°C, Z =Z =50Ω  
S
D
3
OUT  
BIAS  
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS100916  
1 of 6  
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