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SBTJ7S

更新时间： 2022-12-17 13:37:57

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
3页	47K
描述
Small-Signal Schottky Barrier Diodes

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SBTJ7S 数据手册

Silicon-BasedTechnology Corp.

Small-Signal Schottky Barrier Diodes

SBT107WS Series

SBT107WS series are Schottky Barrier Diodes fabricated by a series of

proprietary Schottky barrier patents and technologies (SBT^®) developed by

Silicon-Based Technology Corporation, which exhibit high-performance

characteristics for modern switching, conversion and protection applications with

high speed and low power consumptions. The package types as described in this

data sheet are set forth in routine production; other packages are available upon

special orders.

Features and Advantages:

Low forward voltage drop(V_F)

Low reverse leakage current (I_R)

Very small conduction power loss

Very small switching power loss

Very high switching speed

Very high reliability

Electrical Characteristics :

(@T_A=25°C unless otherwise specified)

Characteristic

Symbol Min. Typ. Max. Unit Test Conditions

Reverse Breakdown Voltage

(Note 2)

V_(BR)R

I_R=100 A

280

320

450

550

@I_F=2.0mA

@I_F=15mA

@ I_F=50mA

@I_F=100mA

Forward Voltage (Note 2)

V_FM

500

600

Reverse Current (Note 2)

Total Capacitance

I_RM

C_T

1.0

V_R=25V

V_R=0V, f=1.0MH_Z

Silicon-Based Technology Corporation

1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C

Tel 886-3-5777897

Fax 886-3-5779832

12 3

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