Datasheet > SBTJDB

SBTJDB

更新时间： 2022-12-20 15:54:37

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其他 - ETC		二极管
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描述
Small-Signal Schottky Barrier Diodes

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SBTJDB 数据手册

Silicon-BasedTechnology Corp.

Small-Signal Schottky Barrier Diodes

SBT103D Series

SBT103D series are Schottky Barrier Diodes fabricated by a series of

proprietary Schottky barrier patents and technologies (SBT^®) developed by

Silicon-Based Technology Corporation, which exhibit high-performance

characteristics for modern switching, conversion and protection applications with

high speed and low power consumptions. The package types as described in this

data sheet are set forth in routine production; other packages are available upon

special orders.

Features and Advantages:

Low forward voltage drop(V_F)

Low reverse leakage current (I_R)

Very small conduction power loss

Very small switching power loss

Very high switching speed

Very high reliability

Electrical Characteristics :

(@T_A=25°C unless otherwise specified)

Characteristic

Symbol Min. Typ. Max. Unit Test Conditions

SBT103AD

Reverse

Breakdown

Voltage

SBT103BD

SBT103CD

I_RS=100 A

V_FM

0.35

0.50

I_F=20mA

I_F=200mA

V_R=30V

Maximum Forward Voltage Drop

V_FM

SBT103AD

Maximum Peak

5.0

I_RM

SBT103BD

V_R=20V

V_R=10V

Reverse Current

SBT103CD

Total Capacitance

C_j

t_rr

V_R=0V, f=1.0MH_Z

I_F=I_R=50mA to 200mA,

I_rr=0.1 I_R,R_L=100

Reverse Recovery Time

Silicon-Based Technology Corporation

1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C

Tel 886-3-5777897

Fax 886-3-5779832

12 3

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