Datasheet > SA631DK-T

SA631DK-T

更新时间： 2024-01-06 05:25:56

品牌	Logo	应用领域
恩智浦 - NXP		局域网射频微波
页数	文件大小	规格书
16页	109K
描述
RF/Microwave Mixer, 800 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER

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技术参数
数据手册

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SA631DK-T 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.77
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
端子数量：	20	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SSOP20,.25	电源：	3 V
子类别：	RF/Microwave Mixers	表面贴装：	YES
技术：	BICMOS	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SA631DK-T 数据手册

Philips Semiconductors

Product specification

1GHz low voltage LNA and mixer

SA631

AC ELECTRICAL CHARACTERISTICS

= +3.0V, T

= 25°C; RF = 881MHz, f

= 964MHz; unless otherwise stated.

amb

VCO

LIMITS

TYP

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

–3s

+3s

Low Noise Amplifier

RF input frequency range

800

1000

MHz

Amplifier gain

–28

0.006

±0.013

–28

–10

–20

–7

Amplifier gain in power-down mode

Gain temperature sensitivity enabled

Gain frequency variation

∆S /∆T

dB/°C

dB/MHz

∆S /∆f

800MHz - 1.0GHz

@ 881 MHz

Amplifier reverse isolation

Amplifier input match

With ext. impedance matching

Amplifier output match

Amplifier input 1dB gain compression

Amplifier input third order intercept

Amplifier noise figure

dBm

-1dB

IP3

1.7

Amplifier turn-on time (Enable Lo → Hi)

Amplifier turn-off time (Enable Hi → Lo)

120

0.3

µs

OFF

Mixer

= 881MHz, f = 964MHz,

Mixer power conversion gain: R = R = 1.2kΩ

9.6

= 83MHz

Mixer input match

Ext. impedance matching req.

–10

11M

Mixer SSB noise figure

Mixer input 1dB gain compression

Mixer input third order intercept

Mixer input second order intercept

Mixer RF feedthrough

–14.5

3.3

dBm

-1dB

IP3

2INT

RF = –32dBm

–45

–23

–32

–42

RFM-IF

LO-IF

LO feedthrough to IF

LO = –0dBm

LO to mixer input feedthrough

LO to LNA input feedthrough

LO-RFM

LO-RF

Overall System

System gain

LNA + Mixer

23.9

24.6

25.3

SYS

1998 Jan 08

1 2 345 6 7...16

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