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S71NS512RD0ZHEML3 PDF预览

S71NS512RD0ZHEML3

更新时间: 2024-01-24 15:06:55
品牌 Logo 应用领域
飞索 - SPANSION 静态存储器内存集成电路
页数 文件大小 规格书
12页 449K
描述
Memory Circuit, Flash+PSRAM, 32MX16, CMOS, PBGA56, 9.20 X 8 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, VFBGA-56

S71NS512RD0ZHEML3 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA56,10X14,20
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.71
风险等级:5.68Is Samacsys:N
其他特性:PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)JESD-30 代码:R-PBGA-B56
长度:9.2 mm内存密度:536870912 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+PSRAM功能数量:1
端子数量:56字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA56,10X14,20
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Other Memory ICs
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

S71NS512RD0ZHEML3 数据手册

 浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第2页浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第3页浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第4页浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第5页浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第6页浏览型号S71NS512RD0ZHEML3的Datasheet PDF文件第7页 
S71NS-R Memory Subsystem Solutions  
MirrorBit® 1.8 Volt-Only Simultaneous Read/Write,  
Burst Mode Multiplexed Flash Memory and Burst Mode  
pSRAM  
512 Mb (32 Mb x 16-bit) and 256 Mb (16 Mb x 16-bit) Flash,  
128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) pSRAM  
S71NS-R Memory Subsystem Solutions Cover Sheet  
Data Sheet  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71NS-R_00  
Revision 08  
Issue Date May 17, 2011  

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