CCD area image sensor S7017 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-100
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
VP1V, VP2V
VP1H, VP2H
-10
-10
V
Operating conditions (MPP mode, Ta=25 °C)
ꢀꢀ
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
VOD
VRD
Min.
18
11.5
1
Typ.
20
12
3
Max.
22
12.5
5
Unit
V
V
Output gate voltage
VOG
V
Substrate voltage
VSS
-
0
-
V
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
VISV
VISH
-
-
VRD
VRD
0
0
6
-8
6
-8
6
-8
6
-8
6
-
-
-
-
8
-7
8
-7
8
-7
8
V
V
V
V
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
-8
-8
4
-9
4
-9
4
-9
4
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
-9
4
-9
-7
8
-7
Transfer gate voltage
VTGL
-8
Electrical characteristics (Ta=25 °C)
ꢀꢀ
Parameter
Signal output frequency
Symbol
fc
frg
Remark
Min.
-
-
-
-
-
-
-
Typ.
80
80
3,200
6,400
300
7
7
150
0.99999
Max.
2,000
2,000
-
-
-
-
-
-
-
Unit
kHz
kHz
-
-
-
-
-
-
-
-
Reset clock frequency
Vertical shift register
capacitance
S7017-1007
S7017-1008
CP1V, CP2V
pF
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
CP1H, CP2H
CSG
pF
pF
pF
pF
-
CRG
CTG
CTE
-
1
*
0.99995
2
DC output level
Vout
Zo
*
12
-
15
3
18
-
V
2
Output impedance
Power dissipation
*
kΩ
P
*2, *3
-
15
-
mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: VOD=20 V , Load resistance=22 kΩ
*3: Power dissipation of the on-chip amplifier.
2