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S29CD016J1JDGH114 PDF预览

S29CD016J1JDGH114

更新时间： 2024-01-03 05:59:22
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
15页 452K
描述
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

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S29CD016J1JDGH114 技术参数

生命周期：Transferred零件包装代码：DIE
包装说明：DIE-74针数：74
Reach Compliance Code：unknownECCN代码：3A001.A.2.A
HTS代码：8542.32.00.51风险等级：5.6
最长访问时间：54 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
启动块：BOTTOMJESD-30 代码：R-XUUC-N74
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：32功能数量：1
端子数量：74字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：145 °C最低工作温度：-40 °C
组织：512KX32封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：RECTANGULAR
封装形式：UNCASED CHIP并行/串行：PARALLEL
编程电压：2.7 V认证状态：Not Qualified
最大供电电压 (Vsup)：2.75 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：2.6 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子形式：NO LEAD端子位置：UPPER
类型：NOR TYPEBase Number Matches：1

S29CD016J1JDGH114 数据手册

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S29CD016J/S29CL016J  
Known Good Die  
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only  
Burst Mode, Dual Boot,  
Simultaneous Read/Write Flash Memory  
Supplement (Advance Information)  
General Description  
The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.  
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two  
separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V  
(S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
„ Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/  
„ Cycling Endurance: 100,000 write cycles per sector (typical)  
„ Command set compatible with JECEC (42.4) standard  
„ Supports Common Flash Interface (CFI)  
erase  
„ 110 nm Floating Gate Technology  
„ Simultaneous Read/Write operation with zero latency  
„ X32 Data Bus  
„ Persistent and Password methods of Advanced Sector  
Protection  
„ Dual Boot Sector Configuration (top and bottom)  
„ Flexible Sector Architecture  
„ Unlock Bypass program command to reduce programming  
time  
„ Write operation status bits indicate program and erase  
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double  
word, and Eight 2K Double Word sectors  
operation completion  
„ VersatileI/O™ control (1.65 V to VCC  
„ Programmable Burst Interface  
)
„ Hardware (WP#) protection of two outermost sectors in the  
large bank  
„ Ready/Busy (RY/BY#) output indicates data available to  
– Linear for 2, 4, and 8 double word burst with or without wrap around  
system  
„ Secured Silicon Sector that can be either factory or customer  
„ Suspend and Resume commands for Program and Erase  
locked  
Operation  
„ 20 year data retention (typical)  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
Speed Option (MHz)  
56  
64  
64  
10  
69  
22  
40  
67  
67  
17  
71  
22  
Continuous Burst Read @ 56 MHz  
90 mA  
50 mA  
50 mA  
150 µA  
Max Asynch. Access Time, ns (tACC  
)
Program  
Max Synch. Latency, ns (tIACC  
Max Synch. Burst Access, ns (tBACC  
Max CE# Access Time, ns (tCE  
Max OE# Access time, ns (tOE  
)
Erase  
)
Standby Mode  
)
)
Typical Program and Erase Times  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Publication Number S29CD016J-CL016J_KGD_SP  
Revision A  
Amendment 2  
Issue Date September 20, 2006  
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in  
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.  
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S29CD016J1JFAI002 CYPRESS

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S29CD016J1JFAI003 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
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 		Flash, 512KX32, 54ns, PBGA80, BGA-80
S29CD016J1JFAI012 SPANSION

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 		Flash, 512KX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
S29CD016J1JFAI012 CYPRESS

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 		Flash, 512KX32, 54ns, PBGA80, BGA-80

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