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S29AL016M10TAI012

更新时间: 2024-01-15 22:21:41
品牌 Logo 应用领域
飞索 - SPANSION 闪存内存集成电路光电二极管
页数 文件大小 规格书
59页 2056K
描述
16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY

S29AL016M10TAI012 数据手册

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S29AL016M  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
3.0 Volt-only Boot Sector Flash Memory  
featuring MirrorBitTM technology  
DATASHEET  
Data Sheet  
Distinctive Characteristics  
Architectural Advantages  
— 400 nA standby mode current  
— 15 mA read current  
„
„
„
Single power supply operation  
— 3 V for read, erase, and program operations  
— 40 mA program/erase current  
— 400 nA Automatic Sleep mode current  
Manufactured on 0.23 µm MirrorBitTM process  
technology  
SecSiTM (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
„
Package options  
— 48-ball Fine-pitch BGA  
— 64-ball Fortified BGA  
— 48-pin TSOP  
Software Features  
— May be programmed and locked at the factory or by  
the customer  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word programming time  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
„
„
Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-  
one 64 Kbyte sectors (byte mode)  
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-  
one 32 Kword sectors (word mode)  
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
Hardware Features  
„
„
„
Top or bottom boot block configurations available  
100,000 erase cycle typical per sector  
20-year typical data retention  
— Sector Protection: hardware-level method of  
preventing write operations within a sector  
Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
Performance Characteristics  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) indicates program or  
erase cycle completion  
„
High performance  
— 90 ns access time  
— 0.7 s typical sector erase time  
„
Low power consumption (typical values at 5 MHz)  
Publication Number S29AL016M_00 Revision A Amendment 4 Issue Date April 21, 2004  

S29AL016M10TAI012 替代型号

型号 品牌 替代类型 描述 数据表
M28W160BT100N1T STMICROELECTRONICS

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16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

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