Datasheet > RD38F0010W0ZTQ0

RD38F0010W0ZTQ0

更新时间： 2024-01-21 08:49:03

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存无线
页数	文件大小	规格书
46页	653K
描述
Wireless Flash Memory (W18/W30 SCSP)

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中文翻译

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数据手册

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RD38F0010W0ZTQ0 数据手册

Numonyx™ Wireless Flash Memory

(W18/W30 SCSP)

32WQ and 64WQ Family with Asynchronous RAM

Datasheet

Product Features

Device Architecture

Flash Performance

— Flash Density: 32-Mbit, 64-Mbit

— Async PSRAM Density: 16-Mbit, 32-Mbit

— 65 ns initial access at 1.8 V I/O

— 70 ns initial access at 3.0 V I/O

— Top, Bottom or Dual flash parameter

configuration

Device Voltage

— 25 ns async page at 1.8 V or 3.0 V I/O

— 14 ns sync reads (t_CHQV) at 1.8 V I/O

— 20 ns sync reads (t_CHQV) at 3.0 V I/O

— Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V

— RAM VCC = 1.8 V or 3.0 V

Device Packaging

— Enhanced Factory Programming:

3.10 µs/Word (Typ)

Flash Architecture

— 88 balls (8 x 10 active ball matrix)

— Area: 8x10 mm

— Read-While-Write/Erase

— Asymmetrical blocking structure

— Height: 1.2 mm to 1.4 mm

PSRAM Performance

— 4-KWord parameter blocks (Top or

Bottom)

— 32-KWord main blocks

— 4-Mbit partition size

— 70 ns initial access, 25 ns async page reads at

1.8 V I/O

— 70 ns initial access async PSRAM at 1.8 V

I/O

— 128-bit One-Time Programmable

(OTP) Protection Register

— 70 ns initial access, 25 ns async page

reads at 3.0 V I/O

SRAM Performance

— Zero-latency block locking

— Absolute write protection with block

lock using F-VPP and F-WP#

— 70 ns initial access at 1.8 V or 3.0 V I/O

Quality and Reliability

Flash Software

— Numonyx™ Flash Data Integrator

(FDI) and Common Flash Interface

(CFI)

— Extended Temperature: –25 °C to +85 °C

— Minimum 100K flash block erase cycle

— 90 nm ETOX™ IX flash technology

— 130 nm ETOX™ VIII flash technology

Order Number: 251407-13

November 2007

12 3 4 5 6 7...46

中文翻译

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