Datasheet > RB200_06

RB200_06

更新时间： 2024-02-23 13:05:00

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
4页	58K
描述
2.0A SINGLE-PHASE BRIDGE RECTIFIER

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中文翻译

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数据手册

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RB200_06 数据手册

WTE

POWER SEMICONDUCTORS

RB200 – RB2010

2.0A SINGLE-PHASE BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Recognized File # E157705

RB-20

Min

Dim

Max

9.40

7.40

—

8.60

6.90

27.9

25.4

0.71

4.60

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Mechanical Data

—

Case: RB-20, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.81

5.60

All Dimensions in mm

Polarity: As Marked on Body

Weight: 1.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol RB200 RB201 RB202 RB204 RB206 RB208 RB2010 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

2.0

Average Rectified Output Current @T_A= 50°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage (per element)

@I_F= 2.0A

V^FM

I^RM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Operating Temperature Range

Storage Temperature Range

T^j

-55 to +125

-55 to +150

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

RB200 – RB2010

1 of 4

12 3 4

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