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R877-01 PDF预览

R877-01

更新时间: 2024-01-16 11:05:31
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PHOTOMULTlPLlER TUBES

R877-01 数据手册

 浏览型号R877-01的Datasheet PDF文件第2页 
PHOTOMULTlPLlER TUBES  
R877, R877-01  
For Scintillation Counting, 127mm(5 Inch) Diameter  
Bialkali Photocathode, 10-Stage, Head-On Type  
GENERAL  
Parameter  
Description/Value  
300 to 650  
420  
Unit  
nm  
nm  
Spectral Response  
Wavelength of Maximum Response  
MateriaI  
Minimum Effective Area  
R877  
R877 01  
Structure  
Number of Stages  
Anode to Last Dynode  
Anode to All Other Electrodes  
Bialkali  
111  
Borosilicate glass  
K free Borosilicate glass  
Photocathode  
MateriaI  
mm dia.  
Window  
Dynode  
Box and Grid  
10  
pF  
pF  
6
7
Direct Interelectrode  
Capacitances  
14 pin base JEDEC No. B14 38  
Base  
SuitabIe Socket  
E678 14A(option)  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Between Anode and Cathode  
Between Anode and Last Dynode  
Value  
1500  
300  
0.1  
-30 to +50  
Unit  
Vdc  
Vdc  
mA  
°C  
Supply Voltage  
Avarage Anode Current  
Ambient Temperature  
CHARACTERISTlCS (at 25°C)  
Parameter  
Min.  
60  
Typ.  
80  
80  
10  
40  
Max.  
Unit  
A/lm  
mA/W  
A/lm b  
A/W  
Luminous (2856K)  
Radiant at 420nm  
Blue (CS 5 58 filter)  
Luminous (2856K)  
Radiant at 420nm  
Cathode  
Sensitivity  
20  
Anode Sensitivity  
Gain  
4
104  
5.0 105  
A/W  
Anode Dark Current (after 30min. storage in darkness)  
10  
10  
90  
50  
nA  
ns  
ns  
Anode Pulse Rise Time  
Time Response  
Electron Transit Time  
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
G
Dy1  
Dy2 Dy3  
Dy4 Dy5 Dy6 Dy7  
Dy8  
Dy9 Dy10  
P
Electrodes  
Ratio  
1
1
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc,  
K : Cathode, Dy : Dynode, P : Anode, G:Grid  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1999 Hamamatsu Photonics K.K.  
©

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