Datasheet > R0830LC12F

R0830LC12F

更新时间： 2023-12-06 20:13:21

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
13页	1191K
描述
Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4.5kV，平均电流超过5kA，额定tq最低为10μs。独特的分布式门极设计和寿命控制功能使这些器件既具有

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R0830LC12F 数据手册

Distributed Gate Thyristor Types R0830LC12x to R0830LC14x

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

2.4

1.9

0.357

I_TM=1400A

Slope resistance

V/µs

(dv/dt)_crCritical rate of rise of off-state voltage

200

V_D=80% V_DRM, Linear ramp, Gate o/c

Rated V_DRM

I_DRM

I_RRM

V_GT

I_GT

V_GD

I_H

Peak off-state current

Peak reverse current

Gate trigger voltage

Rated V_RRM

3.0

300

T_j=25°C

V_D=10V, I_T=3A

Gate trigger current

Gate non-trigger voltage

Holding current

0.25 Rated V_DRM

1000 T_j=25°C

1.0

t_gd

Gate controlled turn-on delay time

Turn-on time

0.4

0.8

285

110

2.7

V_D=67% V_DRM, I_TM=1500A, di/dt=60A/µs,

I_FG=2A, t_r=0.5µs, T_j=25°C

µs

t_gt

2.0

Q_rr

Q_ra

I_rm

Recovered charge

µC

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time

130

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V

t_rr

µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=33%V_DRM, dV_dr/dt=20V/µs

II_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=33%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time (note 2)

µs

0.032 Double side cooled

0.064 Single side cooled

K/W

Thermal resistance, junction to heatsink

(note 3)

R_thJK

Mounting force

Weight

340

Outline option LC

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering

information for details of t_qcodes.

3) For other clamp forces, please consult factory

Data Sheet. Types R0830LC12x to R0830LC14x Issue 3

Page 2 of 12

August 2012

123 4 5 6 7...13

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