Datasheet > R0736LC25L

R0736LC25L

更新时间： 2023-12-06 20:13:27

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
13页	1136K
描述
Littelfuse是分布式门极技术领域公认的全球领先公司。这些器件的阻断电压最高可达4.5kV，平均电流超过5kA，额定tq最低为10μs。独特的分布式门极设计和寿命控制功能使这些器件既具有

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R0736LC25L 数据手册

R0736LC20x to R0736LC25x

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

2.7

1.842

0.619

I_TM=1400A

Slope resistance

V/µs

(dv/dt)_crCritical rate of rise of off-state voltage

200

V_D=80% V_DRM, linear ramp

I_DRM

I_RRM

V_GT

I_GT

I_H

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

100 Rated V_DRM

100 Rated V_RRM

3.0

T_j=25°C

300

V_D=10V, I_T=2A

Holding current

1000 T_j=25°C

1.2

tgd

tgt

Gate controlled turn-on delay time

delay time

0.5

1.2

640

240

125

3.8

V_D=67% V_DRM, I_TM=1000A, di/dt=60A/µs,

I_FG=2A, t_r=0.5µs, T_case=25°C

µs

2.4

Q_rr

Q_ra

I_rm

Recovered charge

µC

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time

350

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V

t_rr

µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=67%V_DRM, dV_dr/dt=20V/µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=67%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time (note 2)

µs

R_thJK

Thermal resistance, junction to heatsink

0.032 Double side cooled

K/W

0.064 Single side cooled

Mounting force

Weight

W_t

340

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for

details of t_qcodes.

Data Sheet. Types R0736LC20x-25x Issue 3

Page 2 of 12

June, 2019

123 4 5 6 7...13

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