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R0633YS10D

更新时间： 2024-01-25 23:55:44
品牌 Logo 应用领域
IXYS 栅栅极
页数 文件大小 规格书
12页 349K
描述
Silicon Controlled Rectifier, 1269A I(T)RMS, 1055000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, 101A335, 3 PIN

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R0633YS10D 技术参数

生命周期：Active包装说明：DISK BUTTON, O-CXDB-X3
Reach Compliance Code：compliant风险等级：5.65
标称电路换相断开时间：20 µs配置：SINGLE
关态电压最小值的临界上升速率：200 V/us最大直流栅极触发电流：200 mA
最大直流栅极触发电压：3 V最大维持电流：1000 mA
JESD-30 代码：O-CXDB-X3最大漏电流：60 mA
通态非重复峰值电流：6300 A元件数量：1
端子数量：3最大通态电流：1055000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：1269 A断态重复峰值电压：1000 V
重复峰值反向电压：1000 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子形式：UNSPECIFIED
端子位置：UNSPECIFIED触发设备类型：SCR
Base Number Matches：1

R0633YS10D 数据手册

 浏览型号R0633YS10D的Datasheet PDF文件第2页浏览型号R0633YS10D的Datasheet PDF文件第3页浏览型号R0633YS10D的Datasheet PDF文件第4页浏览型号R0633YS10D的Datasheet PDF文件第6页浏览型号R0633YS10D的Datasheet PDF文件第7页浏览型号R0633YS10D的Datasheet PDF文件第8页 
WESTCODE Positive development in power electronics  
R0663YS10x to R0633YS12x  
The total dissipation is now given by:  
=
+ ⋅  
E f  
W(TOT) W(original)  
12.2 Determination without Measurement  
In circumstances where it is not possible to measure voltage and current conditions, or for design  
purposes, the additional losses E in joules may be estimated as follows.  
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).  
Let f be the operating frequency in Hz  
TSINK  
=
TSINK  
−
( )  
original  
(
E Rth f  
⋅ ⋅  
)
(
new  
)
Where TSINK (new) is the required maximum heat sink temperature and  
TSINK (original) is the heat sink temperature given with the frequency ratings.  
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage  
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than  
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value  
obtained from the curves.  
NOTE 1  
- Reverse Recovery Loss by Measurement  
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring  
the charge care must be taken to ensure that:  
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high  
amplitude forward current.  
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope  
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal  
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically  
damped snubber, connected across diode anode to cathode. The formula used for the calculation  
of this snubber is shown below:  
Vr  
R2 = 4⋅  
CS ⋅ di  
dt  
Where: Vr = Commutating source voltage  
CS = Snubber capacitance  
R
= Snubber resistance  
13.0 Gate Drive  
Ω
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than  
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.  
The duration of pulse may need to be configured with respect to the application but should be no shorter  
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in  
charge to trigger.  
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2  
Page 5 of 12  
June, 2001  
12345678...12

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