Datasheet > R0487YS12F

R0487YS12F

更新时间： 2024-01-07 15:03:31

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
12页	385K
描述
Silicon Controlled Rectifier, 982A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN

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R0487YS12F 技术参数

生命周期：	Active	包装说明：	DISK BUTTON, O-CXDB-X3
Reach Compliance Code：	compliant	风险等级：	5.17
配置：	SINGLE	最大直流栅极触发电流：	200 mA
JESD-30 代码：	O-CXDB-X3	元件数量：	1
端子数量：	3	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	ROUND	封装形式：	DISK BUTTON
认证状态：	Not Qualified	最大均方根通态电流：	982 A
断态重复峰值电压：	1200 V	重复峰值反向电压：	1200 V
表面贴装：	YES	端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

R0487YS12F 数据手册

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0487YS10# to R0487YS14#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

_DRMV_DSMV_RRM

V_RSM

1100

1300

1500

V_DV_R

DC V

690

810

930

Voltage Grade

1000

1200

1400

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Data Sheet. Type R0487YS10# to R0487YS14# Issue 3

Page 3 of 12

October, 2004

1 234 5 6 7...12

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与R0487YS12F相关器件

型号	品牌	描述	获取价格	数据表
R0487YS14#	LITTELFUSE	Silicon Controlled Rectifier, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335, 3 PIN	获取价格
R0487YS14D	IXYS	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格
R0487YS14D	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格
R0487YS14E	IXYS	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格
R0487YS14E	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格
R0487YS14F	LITTELFUSE	Silicon Controlled Rectifier, 982A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A335	获取价格

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