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PZM9.1NB2T/R PDF预览

PZM9.1NB2T/R

更新时间: 2024-01-03 18:26:54
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管
页数 文件大小 规格书
12页 79K
描述
DIODE 9.1 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SC-59, 3 PIN, Voltage Regulator Diode

PZM9.1NB2T/R 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.21Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
标称参考电压:9.1 V最大反向电流:0.5 µA
表面贴装:YES技术:ZENER
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
电压温度Coeff-Max:5.5 mV/ °C最大电压容差:2.1%
工作测试电流:5 mABase Number Matches:1

PZM9.1NB2T/R 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PZM-N series  
Voltage regulator diodes  
1999 Jan 28  
Product specification  
Supersedes data of 1997 Dec 15  

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