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PT501B PDF预览

PT501B

更新时间: 2024-01-19 11:21:26
品牌 Logo 应用领域
夏普 - SHARP 光电
页数 文件大小 规格书
4页 61K
描述
Photo Transistor, 800nm,

PT501B 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.55Coll-Emtr Bkdn Voltage-Min:45 V
配置:SINGLE最大暗电源:100 nA
红外线范围:YES标称光电流:10 mA
功能数量:1最高工作温度:125 °C
最低工作温度:-25 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:800 nm形状:ROUND
尺寸:4.7 mmBase Number Matches:1

PT501B 数据手册

 浏览型号PT501B的Datasheet PDF文件第2页浏览型号PT501B的Datasheet PDF文件第3页浏览型号PT501B的Datasheet PDF文件第4页 
PT501/PT510  
TO-18 Type Narrow  
Acceptance Phototransistor  
PT501/PT510  
( )  
Unit : mm  
Features  
1. Narrow acceptance ∆θ : TYP. ± 6˚  
Outline Dimensions  
φ 4.7±  
φ 4.7±  
Glass  
lens  
0.1 Glass  
0.1  
(
)
lens  
2. TO -18 type standard package  
PT501  
PT510  
3. With base terminal : PT510  
Applications  
φ 0.45  
1. Optoelectronic switches, optoelectronic  
φ 0.45  
2.5  
counters  
2.5  
3
2. Smoke detectors  
2
φ 2.5  
1
2
3. Infrared applied systems  
1
1.0  
1.0  
φ5.7MAX.  
φ5.7MAX.  
45˚  
45˚  
1
1
(
)
1
2
Collector  
Emitter  
1
2
3
Collector Case  
Base  
Emitter  
2
3
2
(
)
Absolute Maximum Ratings  
Ta = 25˚C  
Parameter  
Collector-emitter voltage  
Emitter-collector voltage  
Collector-base voltage  
Emitter-base voltage  
Symbol  
PT501  
PT510  
Unit  
V
V CEO  
V ECO  
V CBO  
V EBO  
PC  
45  
6
35  
6
V
-
35  
6
V
-
V
Collector power dissipation  
Operating temperature  
Storage temperature  
75  
75  
mW  
˚C  
˚C  
˚C  
T opr  
T stg  
- 25 to + 125 - 25 to + 125  
- 55 to + 150 - 55 to + 150  
*1 Soldering temperature  
T sol  
260  
260  
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package  
(
)
Ta = 25˚C  
Electro-optical Characteristics  
Parameter  
Symbol  
IC  
Conditions  
MIN.  
2.5  
TYP.  
MAX.  
Unit  
PT501  
PT510  
10  
*2Collector current  
VCE = 5V, E e= 10mW/cm2  
-
mA  
20  
Collector dark current  
*2Collector-emitter saturation voltage  
ICEO  
VCE = 30V, Ee = 0  
IC = 1mA, Ee = 10mW/cm2  
-
-
-
2 x 10- 9  
10- 7  
A
V
VCE  
(
)
0.2  
-
-
sat  
Peak sensitivity wavelength  
λ P  
800  
nm  
PT501  
10  
2
Rise time  
Response  
tr  
-
-
-
-
µs  
µs  
PT510  
PT501  
PT510  
VCE = 2V, IC = 2mA,  
(
)
RL = 100PT501: 1kΩ  
time  
10  
3
Fall time  
tf  
(
)
*2 E e : Irradiance by CIE standard light source A tungsten lamp  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,  
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”  

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