NUMONYX B.V (恒忆) 更新时间:2023-10-17 19:10:26
藉由收购 Numonyx 增添了Micron创新产品组合的广度,并强化了我们的能力以满足您对存储器的需求。事实上,我们相信两家专业存储器公司的结合与精进,并汇集了数十年的工程创新技术会提供您更多的选择和弹性。 当然,为实现这次收购的效益,需要对团队,营运和支持网络进行全面整合 —这个过程需要一段时间才能完成。虽然我们已经启动整合规划,但是仍还有许多任务待执行。我们将尽力使整个过程无缝实现。 作为一家联合公司,我们对客户,产品和市场的承诺不会改变,对客户未来产品的需求的支持也一如既往。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
NAND04GW4B4DZL1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR3B4DZL1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR3B4DZL1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B4DZL1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DZL1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR3B4DN6F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR3B4DN6F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B4DN6F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DN6F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR4B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW4B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW4B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR3B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR3B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DN6E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR4B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW4B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW4B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR3B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR3B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DN1F | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B4DN1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GR4B4DN1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW4B4DN1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW4B4DN1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR3B4DN1E | NUMONYX | 获取价格 | ![]() |
闪存 | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash |
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