型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NAND04GW3B4DZL1E | NUMONYX |
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DZL1F | NUMONYX |
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DZL6E | NUMONYX |
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B4DZL6F | NUMONYX |
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4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3C2A | STMICROELECTRONICS |
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4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | |
NAND04GW3C2AN1E | STMICROELECTRONICS |
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4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | |
NAND04GW3C2AN1F | STMICROELECTRONICS |
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4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | |
NAND04GW3C2AN6E | STMICROELECTRONICS |
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4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | |
NAND04GW3C2AN6F | STMICROELECTRONICS |
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4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | |
NAND04GW4B2AN1 | STMICROELECTRONICS |
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256MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 |