BGE788

更新时间： 2024-01-30 06:33:40

品牌	Logo	应用领域
恩智浦 - NXP		射频和微波射频放大器微波放大器高功率电源
页数	文件大小	规格书
7页	46K
描述
750 MHz, 34 dB gain push-pull amplifier

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技术参数
数据手册

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BGE788 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.7	功能数量：	1
最高工作温度：	100 °C	最低工作温度：	-20 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOT-115J
电源：	24 V	子类别：	RF/Microwave Amplifiers
最大压摆率：	325 mA	技术：	HYBRID
Base Number Matches：	1

BGE788 数据手册

BGE788

750 MHz, 34 dB gain push-pull ampliﬁer

Rev. 04 — 30 March 2005

Product data sheet

1. Product proﬁle

1.1 General description

Hybrid high dynamic range ampliﬁer module in a SOT115J package operating at a supply

voltage of 24 V (DC). The module consists of two cascaded stages both in cascode

conﬁguration.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

MSC895

1.2 Features

■ Excellent linearity

■ Extremely low noise

■ High gain

■ Excellent return loss properties

1.3 Applications

■ Single module line extender in CATV systems operating in the 40 MHz to 750 MHz

frequency range.

1.4 Quick reference data

Table 1:

Quick reference data

Symbol Parameter

Conditions

f = 50 MHz

f = 750 MHz

V_B= 24 V

Min

33.5

Typ

Max

34.5

Unit

G_p

I_tot

power gain

[1]

total current consumption (DC)

290

320

[1] The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 30 V.

12 3 4 5 6 7

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