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P6SMB350CAHE3_A/H PDF预览

P6SMB350CAHE3_A/H

更新时间： 2023-04-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 104K
描述
Trans Voltage Suppressor Diode, 300V V(RWM), Bidirectional

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P6SMB350CAHE3_A/H 数据手册

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P6SMB Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMBJ)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.8 V to 459 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
V
BR (bi-directional)  
PPPM  
PD  
5.0 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
100 A  
Case: DO-214AA (SMBJ)  
TJ max.  
150 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMBJ)  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 06-Jun-14  
Document Number: 88370  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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