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P6KE180-T PDF预览

P6KE180-T

更新时间: 2024-01-18 09:58:06
品牌 Logo 应用领域
RECTRON 局域网二极管
页数 文件大小 规格书
5页 33K
描述
Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-15, PLASTIC PACKAGE-2

P6KE180-T 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.23
Is Samacsys:N其他特性:LOW ZENER IMPEDANCE
最大击穿电压:198 V最小击穿电压:162 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P6KE180-T 数据手册

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TVS  
P6KE  
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
SERIES  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
600 WATT PEAK POWER 5.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 600 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
DO-15  
* Fast response time  
(
)
)
.034 0.9  
DIA.  
(
.028 0.7  
(
)
1.0 25.4  
MIN.  
(
)
.300 7.6  
(
)
.230 5.8  
(
)
.140 3.6  
DIA.  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
)
.104 2.6  
(
)
1.0 25.4  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load,  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types P6KE6.8 thru P6KE400  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
Watts  
RATINGS  
P
PPM  
Minimum 600  
Peak power dissipation with a 10/1000uS (NOTES 1, FIG.1)  
Steady state power dissipation at T  
.375” ( 9.5 mm ) ( NOTES 2 )  
L
= 75oC lead lengths,  
P
M(AV)  
5.0  
Watts  
Amps  
Peak forward surge current, 8.3ms single half sine wave-  
superimposed on rated load( JEDEC METHOD ) ( NOTES 3 )  
I
FSM  
100  
Maximum instantaneous forward voltage at 50A for  
unidirectional only ( NOTES 4 )  
V
F
3.5/5.0  
Volts  
0 C  
Operating and storage temperature range  
T
J
, TSTG  
-55 to + 150  
2002-12  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on copper pad area of 1.6 X 1.6”( 40X40 mm) per Fig. 5  
3. Measured on 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum.  
4. V = 3.0V max. for devices of V(BR) < 200V and V = 5.0 Volts for devices of V(BR) > 200V.  
F
F

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