Datasheet > P4SMA82AHE3/61

P4SMA82AHE3/61

更新时间： 2024-02-13 19:04:22

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	102K
描述
TVS DIODE 70.1V 113V DO214AC

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数据手册
替代型号

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P4SMA82AHE3/61 数据手册

P4SMA Series

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

100

10 000

Non-Repetitive Pulse

Waveform shown in Fig. 3

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

Measured at

Stand-Off

Voltage V_WM

_A= 25 °C

1000

100

P4SMA6.8A -

P4SMA91A

Uni-Directional

P4SMA100A -

P4SMA540A

Bi-Directional

0.2 x 0.2" (5.0 x 5.0 mm)

Copper Pad Areas

0.1

0.1 µs

1.0 µs

10 µs

100 µs

1.0 ms

10 ms

100

200

t_d- Pulse Width (s)

V_BR- Breakdown Voltage (V)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 4 - Typical Junction Capacitance

100

1000

100

0.001

0.01

0.1

100

1000

100 125

150 175

200

T_J- Initial Temperature (°C)

t_p- Pulse Duration (s)

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 5 - Typical Transient Thermal Impedance

150

200

T_J= 25 °C

Pulse Width (t_d)

T_J= T_Jmax.

t_r= 10 µs

8.3 ms Single Half Sine-Wave

is defined as the Point

where the Peak Current

decays to 50 % of I_PPM

Peak Value

I_PPM

100

I_PP

Half Value -

I_PPM

10/1000 µs Waveform

as defined by R.E.A.

t_d

1.0

3.0

4.0

2.0

100

t - Time (ms)

Number of Cycles at 60 Hz

Fig. 3 - Pulse Waveform

Fig. 6 - Maximum Non-Repetitive Forward Surge Current

Uni-Directional Use Only

Revision: 30-Jun-2021

Document Number: 88367

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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P4SMA82AHE3/61 替代型号

型号	品牌	替代类型	描述	数据表
P4SMA82CA-E3/5A	VISHAY	完全替代	TVS DIODE 70.1V 113V DO214AC
P4SMA82CAHE3/61	VISHAY	完全替代	TVS DIODE 70.1V 113V DO214AC
P4SMA82CAHE3/5A	VISHAY	完全替代	TVS DIODE 70.1V 113V DO214AC

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