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P4SMA20AHE3/61 PDF预览

P4SMA20AHE3/61

更新时间: 2024-01-02 00:37:57
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
6页 102K
描述
TVS DIODE 17.1V 27.7V DO214AC

P4SMA20AHE3/61 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.28
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:21 V
最小击穿电压:19 V击穿电压标称值:20 V
最大钳位电压:27.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:3.3 W认证状态:Not Qualified
最大重复峰值反向电压:17.1 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30

P4SMA20AHE3/61 数据手册

 浏览型号P4SMA20AHE3/61的Datasheet PDF文件第1页浏览型号P4SMA20AHE3/61的Datasheet PDF文件第2页浏览型号P4SMA20AHE3/61的Datasheet PDF文件第3页浏览型号P4SMA20AHE3/61的Datasheet PDF文件第5页浏览型号P4SMA20AHE3/61的Datasheet PDF文件第6页 
P4SMA Series  
Vishay General Semiconductor  
www.vishay.com  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
100  
10  
1
10 000  
Non-Repetitive Pulse  
Waveform shown in Fig. 3  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
Measured at  
Stand-Off  
Voltage VWM  
T
A = 25 °C  
1000  
100  
10  
P4SMA6.8A -  
P4SMA91A  
Uni-Directional  
P4SMA100A -  
P4SMA540A  
Bi-Directional  
0.2 x 0.2" (5.0 x 5.0 mm)  
Copper Pad Areas  
0.1  
0.1 µs  
1.0 µs  
10 µs  
100 µs  
1.0 ms  
10 ms  
1
10  
100  
200  
td - Pulse Width (s)  
VBR - Breakdown Voltage (V)  
Fig. 1 - Peak Pulse Power Rating Curve  
Fig. 4 - Typical Junction Capacitance  
100  
75  
1000  
100  
10  
1
50  
25  
0
0.001  
0.01  
0.1  
1
10  
100  
1000  
0
25  
50  
75  
100 125  
150 175  
200  
TJ - Initial Temperature (°C)  
tp - Pulse Duration (s)  
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature  
Fig. 5 - Typical Transient Thermal Impedance  
150  
200  
TJ = 25 °C  
Pulse Width (td)  
TJ = TJ max.  
tr = 10 µs  
8.3 ms Single Half Sine-Wave  
is defined as the Point  
where the Peak Current  
decays to 50 % of IPPM  
Peak Value  
IPPM  
100  
50  
100  
50  
0
IPP  
Half Value -  
IPPM  
2
10/1000 µs Waveform  
as defined by R.E.A.  
td  
10  
1.0  
3.0  
4.0  
0
2.0  
1
5
10  
50  
100  
t - Time (ms)  
Number of Cycles at 60 Hz  
Fig. 3 - Pulse Waveform  
Fig. 6 - Maximum Non-Repetitive Forward Surge Current  
Uni-Directional Use Only  
Revision: 30-Jun-2021  
Document Number: 88367  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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