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P1500ECMC PDF预览

P1500ECMC

更新时间: 2024-02-06 20:15:31
品牌 Logo 应用领域
力特 - LITTELFUSE 触发装置硅浪涌保护器双向触发二极管
页数 文件大小 规格书
2页 123K
描述
MicroCapacitance (MC) SIDACtor Device

P1500ECMC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SIP包装说明:IN-LINE, R-PSIP-T12
针数:12Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.24
最大转折电压:180 V配置:SEPARATE, 4 ELEMENTS
最大断态直流电压:140 V最大维持电流:150 mA
JESD-30 代码:R-PSIP-T12通态非重复峰值电流:50 A
元件数量:4端子数量:12
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified重复峰值反向电压:140 V
子类别:Silicon Surge Protectors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

P1500ECMC 数据手册

 浏览型号P1500ECMC的Datasheet PDF文件第2页 
MicroCapacitance (MC) SIDACtor Device  
MicroCapacitance (MC) SIDACtor Device  
The TO-92 MC SIDACtor series is intended for applications sensitive to load values.  
Typically, high speed connections require a lower capacitance. CO values for MC devices  
are 40% lower than a standard EC part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and  
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
O
DRM  
S
T
DRM  
S
T
H
Number *  
Volts  
58  
Volts  
77  
Volts  
µAmps  
mAmps  
800  
Amps  
2.2  
mAmps  
150  
pF  
60  
50  
40  
40  
P0640EC MC  
P1500EC MC  
P2600EC MC  
P3100EC MC  
4
4
4
4
5
5
5
5
140  
220  
275  
180  
300  
350  
800  
800  
800  
2.2  
2.2  
2.2  
150  
150  
150  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 18  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  

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