5秒后页面跳转
P036RH08DG PDF预览

P036RH08DG

更新时间: 2024-02-17 04:03:25
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 100A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-65

P036RH08DG 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.75其他特性:HIGH RELIABILITY
标称电路换相断开时间:35 µs配置:SINGLE
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:100 mA
最大直流栅极触发电压:3 V最大维持电流:400 mA
JEDEC-95代码:TO-65JESD-30 代码:O-MUPM-H3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:100 A重复峰值关态漏电流最大值:10000 µA
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

P036RH08DG 数据手册

 浏览型号P036RH08DG的Datasheet PDF文件第2页 

与P036RH08DG相关器件

型号 品牌 描述 获取价格 数据表
P036RH08DGO IXYS Silicon Controlled Rectifier, 100A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element

获取价格

P036RH08DH0 IXYS Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,800V V(DRM),100A I(T),TO-208AC

获取价格

P036RH08DJ IXYS Silicon Controlled Rectifier, 100A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-65

获取价格

P036RH08DJ0 IXYS Silicon Controlled Rectifier, 100000mA I(T), 800V V(DRM)

获取价格

P036RH08DK IXYS Silicon Controlled Rectifier, 100A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-65

获取价格

P036RH08DK0 IXYS Silicon Controlled Rectifier, 100000mA I(T), 800V V(DRM)

获取价格