Datasheet > P02221B2P

P02221B2P

更新时间： 2024-01-03 17:41:43

品牌	Logo	应用领域
EUDYNA		放大器
页数	文件大小	规格书
6页	289K
描述
500mW InGaP HBT Amplifier

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技术参数
数据手册

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P02221B2P 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12.5 dB	最大输入功率 (CW)：	15 dBm
最大工作频率：	2500 MHz	最小工作频率：	1800 MHz
射频/微波设备类型：	NARROW BAND MEDIUM POWER	Base Number Matches：	1

P02221B2P 数据手册

Technical Note

P02221B2P

500mW InGaP HBT Amplifier

♦Features

♦Functional Diagram

·1.8 to 2.5GHz Frequency Band

·+26.5dBm Output Power

·+43dBm Output IP3

Pin No.

Function

RF Input

Ground

2, 4

·+5V Single Supply Voltage

·14dB Gain at 2.14GHz

RF Output

·Highly Reliable InGaP HBT

·Pb-free SOT-89 SMT Package

·AuSn DieAttach for Low and

Stable Thermal Resistance

♦Ordering Information

Number

of devices

1000

Part No

Description

Container

♦Applications

P02221B2P

HBTAmplifier

2.14GHz

7” Reel

Anti-static

Bag

·Wireless communication system

KP035J

·Cellular, PCS, PHS, W-CDMA, WLAN

Application Circuit

♦Description

♦Absolute Maximum Ratings (@Tc=25°C)

P02221B2P is a high performance InGaP/GaAs HBT

amplifier housed in a low-cost SOT-89 package. The

hetero-junction epitaxial structure has been designed to

achieve low distortion, which leads to high IP3. The device

needs only a +5V single power supply voltage in operation.

Utilization of AuSn die attach has realized a low and stable

thermal resistance.

Parameter

Symbol

Value

Units

Device Voltage

Device Current

RF Input Power

(continuous)

Power Dissipation

Junction Temperature

Storage Temperature

500

dBm

°C

+150

- 40 to +150

Tstg

Tc: Case Temperature. Operating the device beyond any of these

values may cause permanent damage.

♦Electrical Specifications (@Tc=+25°C, Vs=+5V) Measured at 2140MHz using application circuit.

Values

Typ.

Parameter

Symbol

Test Conditions

Units

Min.

Max.

Consumption Current

RF=off

247

294

341

IP3_12

IP3_15

Pout=12dBm S.C.L.

Pout=15dBm S.C.L.

---

38.5

---

dBm

Output IP3

Output Power

P1dB

---

24.5

26.5

---

dBm

@ 1dB Gain Compression

Small Signal Gain

Input Return Loss

Output Return Loss

Thermal Resistance

S11

S22

Rth

12.5

---

-10

-8

---

Pin=-10dBm

Junction-Case

---

°C/W

Specifications and information are subject to change without notice.

2005-07

Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan

Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com Web Site : www.eudyna.com

-1-

12 3 4 5 6

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