N-Channel Logic Level Enhancement Mode
Field Effect Transistor
NIKO-SEM
P01N02LJA
J-LEAD8
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
4
:GATE
G
25V
1.2A
70mΩ
5,6,7,8 :DRAIN
1,2,3 :SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
VGS
±15
1.2
V
TC = 25 °C
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
ID
TC = 100 °C
1.0
A
IDM
PD
12
TC = 25 °C
0.6
W
TC = 100 °C
0.5
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
SYMBOL
TYPICAL
MAXIMUM
UNITS
°C / W
65
RθJC
RθJA
230
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
GS = 0V, ID = 250 µA
DS = VGS, ID = 250 µA
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
25
V
V
0.7 1.0
2.5
V
VDS = 0V, VGS = ±15V
VDS = 20V, VGS = 0V
±250 nA
25
µA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
RDS(ON)
gfs
V
DS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 7V, ID = 1.2A
250
1.2
A
120 180
Drain-Source On-State Resistance1
Forward Transconductance1
mΩ
V
GS = 10V, ID = 1.2A
70
16
120
VDS = 20V, ID = 1.2A
S
AUG-30-2002
1