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P0120007P

更新时间： 2024-02-27 05:40:49
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
13页 779K
描述
250mW GaAs Power FET (Pb-Free Type)

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P0120007P 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F4
针数：4Reach Compliance Code：unknown
风险等级：5.37其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：10 VFET 技术：METAL SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-PSSO-F4
JESD-609代码：e6元件数量：1
端子数量：4工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：SINGLE
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

P0120007P 数据手册

 浏览型号P0120007P的Datasheet PDF文件第2页浏览型号P0120007P的Datasheet PDF文件第3页浏览型号P0120007P的Datasheet PDF文件第4页浏览型号P0120007P的Datasheet PDF文件第5页浏览型号P0120007P的Datasheet PDF文件第6页浏览型号P0120007P的Datasheet PDF文件第7页 
Technical Note  
P0120007P  
250mW GaAs Power FET (Pb-Free Type)  
SUMITOMO ELECTRIC  
♦Features  
4
♦Functional Diagram  
· Up to 2.7 GHz frequency band  
· Beyond +22 dBm output power  
· Up to +41dBm Output IP3  
· High Drain Efficiency  
Pin No.  
Function  
Input/Gate  
Ground  
1
2, 4  
3
1
2
3
· 15dB Gain at 2.1GHz  
Output/Drain  
· SOT-89 SMT Package  
· Low Noise Figure  
♦Ordering Information  
Number  
Part No  
Description  
Container  
of devices  
♦Applications  
P0120007P GaAs Power FET  
1000  
7” Reel  
Anti-static  
Bag  
· Wireless communication system  
· Cellular, PCS, PHS, W-CDMA, WLAN  
2.11-2.17GHz  
KP027J  
1
Application Circuit  
♦Description  
♦Absolute Maximum Ratings (@Tc=25°C)  
P0120007P is a high performance GaAs MESFET housed in  
a low-cost SOT-89 package. Our originally developed  
"pulse-doped" channel structure has realized low distortion,  
which leads to high IP3. The channel structure also achieved  
an extremely low noise figure. The details about pulse-doped  
FET channel are described in our products catalog.  
Utilization of AuSn die attach has realized a low and stable  
thermal resistance. The lead frame is plated with Sn-Bi to  
make the device Pb-free.  
SEI’s long history of manufacturing has cultivated high  
device reliability. The estimated MTTF of the FET is longer  
than 15years at Tj of 150°C. You can see the details in  
Reliability and Quality Assurance.  
Parameter  
Symbol  
Value  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Vds  
10  
Vgs  
- 4  
V
Ids  
Idss  
13 (*)  
---  
RF Input Power  
(continuous)  
Pin  
dBm  
Power Dissipation  
Junction Temperature  
Storage Temperature  
Pt  
Tj  
Tstg  
2.1  
W
°C  
°C  
150 (**)  
- 40 to +150  
Tc: Case Temperature. Operating the device beyond any of these  
values may cause permanent damage.  
(*) Measured at 2.1GHz with our test fixture matched to IP3.  
(**) Recommended Tj under operation is below 125°C.  
♦Electrical Specifications (@Tc=25°C)  
Values  
Parameter  
Symbol  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
DC  
RF  
Saturated Drain Current  
Transconductance  
Pinchoff Voltage  
Idss  
gm  
Vp  
Vds=3V, Vg=0V  
Vds=8V, Ids=100mA  
Vds=8V, Ids=10mA  
---  
---  
300  
mA  
mS  
V
90  
---  
---  
---  
- 3.0  
- 1.7  
Gate-Source Breakdown Voltage  
Thermal Resistance  
|Vgs0|  
3.0  
---  
---  
---  
---  
V
Igso= - 10µA  
Rth  
f
Channel-Case  
60  
2.7  
°C/W  
GHz  
Frequency  
Output Power  
P1dB  
24  
---  
dBm  
@ 1dB Gain Compression  
Vds=8V  
Ids=80mA  
f=2.1GHz  
Small Signal Gain  
G
15  
41  
---  
---  
dB  
Output IP3  
IP3  
---  
---  
dBm  
PowerAdded Efficiency  
38  
---  
%
η add  
Specifications and information are subject to change without notice.  
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan  
2003-11  
Phone: +81-45-853-7263 Fax: +81-45-853-1291  
e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/  
-1-  
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