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HL8334MG PDF预览

HL8334MG - OPNEXT. INC.

二极管激光二极管
型号:
HL8334MG
Datasheet下载:
HL8334MG
HL8334MG描述:
GaAlAs Laser Diode
HL8334MG应用:
二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL8334MG

应用: 二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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  • HL8334MG参数
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生命周期
Obsolete
IHS 制造商
OPNEXT INC
包装说明
LD/MG, 3 PIN
Reach Compliance Code
unknown
风险等级
5.61
Is Samacsys
N
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
60 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
40 mW
峰值波长
830 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
70 mA
Base Number Matches
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HL8334MG
GaAlAs Laser Diode
Description
The HL8334MG is a high-power 0.8
µm
band GaAlAs laser diode with a TQW (triple quantum well) structure. It is
suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
ODE-208-057B (Z)
Rev.2
Jun. 13, 2006
Features
Infrared light output:
λp
= 820 to 840 nm
High power:
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
Built-in monitor photodiode
Single longitudinal mode
Package Type
HL8334MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 1
µs,
duty = 50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Operating current
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
ηs
I
OP
θ//
θ⊥
A
S
λp
I
S
Min
0.4
7
18
820
0.08
Typ
40
0.5
120
10
22
5
830
0.20
Max
70
0.9
160
14
32
840
0.40
Unit
mA
mW/mA
mA
°
°
µm
nm
mA
Test Conditions
24 (mW) / (I
(32mW)
– I
(8mW)
)
P
O
= 40 mW
P
O
= 40 mW, FWHM
P
O
= 40 mW, FWHM
P
O
= 4 mW, NA = 0.4
P
O
= 40 mW
P
O
= 40 mW, V
R(PD)
= 5 V
Rev.2 Jun. 13, 2006 page 1 of 4

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