Datasheet > HL8341MG

HL8341MG

更新时间： 2024-01-14 19:55:16

品牌	Logo	应用领域
OPNEXT		二极管激光二极管
页数	文件大小	规格书
4页	93K
描述
GaAlAs Laser Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HL8341MG 数据手册

HL8340MG

GaAlAs Laser Diode

ODE-208-067A (Z)

Rev.1

May 24, 2007

Description

The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a

light source for sensor applications and various other types of optical equipment.

Features

Package Type

• HL8340MG: MG

Internal Circuit

•

Infrared light output: λp = 852 nm Typ

Optical output power: 50 mW (CW)

Low operating current: 75 mA Typ

Low operating voltage: 1.9 V Typ

Built-in monitor photodiode

Single longitudinal mode

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +60

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Slope efficiency

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

0.9

1.9

Max

Unit

Test Conditions

—

ηs

0.7

—

mW/mA 30 (mW)/(I_(40mW)– I_(10mW))

I_OP

V_OP

θ//

100

2.0

P_O= 50 mW

—

P_O= 50 mW

Beam divergence

P_O= 50 mW, FWHM

parallel to the junction

Beam divergence

perpendicular to the junction

θ⊥

P_O= 50 mW, FWHM

P_O= 50 mW

Lasing wavelength

Monitor current

λp

842

—

852

862

—

I_S

0.25

P_O= 50 mW, V_R(PD)= 5 V

Rev.1 May 24, 2007 page 1 of 4

12 3 4

中文翻译

下载PDF

与HL8341MG相关器件

型号	品牌	获取价格	描述	数据表
HL8342MG	OPNEXT	获取价格	GaAlAs Laser Diode
HL8343MG	OPNEXT	获取价格	GaAlAs Laser Diode
HL851AT	ETC	获取价格	Optoelectronic
HL851BT	ETC	获取价格	Optoelectronic
HL851CC	ETC	获取价格	Optoelectronic
HL851GT	ETC	获取价格	Optoelectronic
HL851RT	ETC	获取价格	Optoelectronic
HL851WC	ETC	获取价格	Optoelectronic
HL851WT	ETC	获取价格	Optoelectronic
HL851YT	ETC	获取价格	Optoelectronic