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HL6554MG PDF预览

HL6554MG - OPNEXT. INC.

二极管激光二极管
型号:
HL6554MG
Datasheet下载:
HL6554MG
HL6554MG描述:
AlGaInP Laser Diodes
HL6554MG应用:
二极管激光二极管
文档页数/大小:
4页 / 93K
品牌Logo:
品牌名称:
OPNEXT [ OPNEXT. INC. ]

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HL6554MG

应用: 二极管激光二极管

文档: 4页 / 93K

品牌: OPNEXT

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  • HL6554MG参数
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生命周期
Obsolete
IHS 制造商
OPNEXT INC
包装说明
LD/MG, 3 PIN
Reach Compliance Code
unknown
风险等级
5.61
Is Samacsys
N
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
60 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
12 mW
峰值波长
658 nm
形状
ROUND
尺寸
1.6 mm
最大阈值电流
70 mA
Base Number Matches
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HL6554MG
AlGaInP Laser Diodes
Description
The HL6554MG is a 0.65
µm
band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
ODE-208-036C (Z)
Rev.3
May 09, 2007
Features
Visible light output
:
λp
=658 nm Typ
Single longitudinal mode
Optical output power : 10 mW CW
Low operating voltage : 2.8 V Max
Built-in photodiode for monitoring laser output
Small package
:
φ
5.6 mm
Package Type
HL6554: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
12
2
30
–10 to +70
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
A
S
λp
I
S
Min
30
7
18
645
0.03
Typ
45
60
8.5
22
6
658
0.07
Max
70
90
2.8
10.5
26
665
0.15
Unit
mA
mA
V
°
°
nm
mA
Test Conditions
P
O
= 10 mW
P
O
= 10 mW
P
O
= 10 mW
P
O
= 10 mW
P
O
= 5 mW, NA = 0.55
P
O
= 10 mW
P
O
= 10 mW, V
R(PD)
= 5 V
Rev.3 May 09, 2007 page 1 of 4

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