Datasheet > HL6554MG

HL6554MG

更新时间： 2024-02-14 09:01:46

品牌	Logo	应用领域
OPNEXT		二极管激光二极管
页数	文件大小	规格书
4页	93K
描述
AlGaInP Laser Diodes

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技术参数
数据手册

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HL6554MG 技术参数

生命周期：	Obsolete	包装说明：	LD/MG, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
功能数量：	1	最高工作温度：	60 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	12 mW	峰值波长：	658 nm
形状：	ROUND	尺寸：	1.6 mm
最大阈值电流：	70 mA	Base Number Matches：	1

HL6554MG 数据手册

HL6554MG

AlGaInP Laser Diodes

ODE-208-036C (Z)

Rev.3

May 09, 2007

Description

The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is

suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

Features

Package Type

• HL6554: MG

Internal Circuit

•

Visible light output

Single longitudinal mode

Optical output power : 10 mW CW

Low operating voltage : 2.8 V Max

Built-in photodiode for monitoring laser output

: λp =658 nm Typ

Small package

: φ 5.6 mm

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +70

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

I_OP

V_OP

θ//

P_O= 10 mW

—

2.8

10.5

Beam divergence

8.5

parallel to the junction

Beam divergence

θ⊥

P_O= 10 mW

perpendicular to the junction

Astigmatism

—

P_O= 5 mW, NA = 0.55

P_O= 10 mW

A_S

λp

I_S

Lasing wavelength

Monitor current

645

0.03

658

0.07

665

0.15

P_O= 10 mW, V_R(PD)= 5 V

Rev.3 May 09, 2007 page 1 of 4

12 3 4

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