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HL6545MG PDF预览

HL6545MG

更新时间: 2024-02-13 18:18:35
品牌 Logo 应用领域
OPNEXT 光电二极管激光二极管DVD
页数 文件大小 规格书
4页 95K
描述
Visible High Power Laser Diode for Recordable-DVD

HL6545MG 技术参数

生命周期:Transferred包装说明:ROHS COMPLIANT, LD/MG, 3 PIN
Reach Compliance Code:unknown风险等级:5.01
配置:SINGLE功能数量:1
最高工作温度:75 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:130 mW
峰值波长:660 nm形状:ROUND
尺寸:1.6 mm最大阈值电流:75 mA
Base Number Matches:1

HL6545MG 数据手册

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HL6545MG  
Visible High Power Laser Diode for Recordable-DVD  
ODE-208-038D (Z)  
Rev.4  
Sept. 04, 2006  
Description  
The HL6545MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is  
suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various  
other types of optical equipment.  
Features  
Package Type  
HL6545MG: MG  
Internal Circuit  
Operating temperature: 75°C Max  
1
3
(300 mW(pulse), pw = 30 ns, duty = 35 %)  
Visible light output  
Low operating current  
: λp = 660 nm Typ  
:
LD  
Iop(1) = 175 mA Typ (Po = 120 mW)  
Iop(2) = 350 mA Typ  
(Po = 300 mW(pulse), pw = 30 ns, duty = 35 %)  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
130  
300 *  
Unit  
mW  
mW  
V
PO  
PO(pulse)  
VR(LD)  
2
CW Operating temperature  
Pulse Operating temperature  
Storage temperature  
Topr(CW)  
Topr(pulse)  
Tstg  
–10 to +75  
–10 to +75  
–40 to +85  
°C  
°C  
°C  
Note: Pulse condition : Pulse width = 30 ns , duty = 35 %  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Symbol  
Ith  
IOP(1)  
IOP(2)  
Min  
Typ  
60  
175  
350  
Max  
75  
210  
Unit  
Test Conditions  
Threshold current  
Operating current(1)  
Operating current(2)  
mA  
mA  
mA  
PO = 120 mW  
PO = 300 mW(pulse)  
pw = 30 ns, duty = 35 %  
Operating voltage  
Lasing wavelength  
Beam divergence  
VOP  
λp  
θ//(1)  
652  
7.5  
2.5  
660  
10.0  
3.0  
664  
12.0  
V
nm  
deg.  
PO = 120 mW  
PO = 120 mW  
PO = 120 mW  
parallel to the junction(1)  
Beam divergence  
perpendicular to the junction  
Beam divergence  
parallel to the junction(2)  
θ⊥  
15  
7.5  
17  
1
19  
deg.  
deg.  
µm  
PO = 120 mW  
θ//(2)  
AS  
PO = 5 mW  
Astigmatism  
PO = 5 mW, NA = 0.55  
Rev.4 Sept. 04, 2006 page 1 of 4  

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