Datasheet > NX6509GK-AZ

NX6509GK-AZ

更新时间： 2024-01-23 06:38:14

品牌	Logo	应用领域
CEL		半导体光电二极管激光二极管
页数	文件大小	规格书
5页	312K
描述
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS

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技术参数
数据手册

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NX6509GK-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.61
最大正向电流：	0.15 A	最大正向电压：	1.6 V
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	85 °C
最低工作温度：	-20 °C	光电设备类型：	LASER DIODE
峰值波长：	1550 nm	最长响应时间：	1e-10 s
半导体材料：	InGaAsP	子类别：	Laser Diodes
表面贴装：	NO	Base Number Matches：	1

NX6509GK-AZ 数据手册

PRELIMINARY DATA SHEET

NEC's 1550 nm InGaAsP MQW-DFB

LASER DIODE IN CAN PACKAGE

FOR LONG HAUL 2.5 Gb/s APPLICATIONS

NX6509

Series

FEATURES

•

OPTICAL OUTPUT POWER:

Po = 5.0 mW

LOW THRESHOLD CURRENT:

Ith = 10 mA

HIGH SPEED:

tr = 100 ps MAX.

tf = 150 ps MAX.

•

WIDE OPERATING TEMPERATURE RANGE:

TC = −20 to +85°C

•

INGAAS MONITOR PIN-PD

CAN PACKAGE:

φ 5.6 mm

•

FIBER COUPLING POINT:

7.5±1.0 mm

DESCRIPTION

NEC's NX6509 Series is a 1550 nm Multiple Quantum Well

(MQW) structured Distributed Feed-Back (DFB) laser diode

with InGaAs monitor PIN-PD.

These devices are designed for 2.5 Gb/s: STM-16 (L-16.2)

application and ideal for Synchronous Digital Hierarchy

(SDH) system.

California Eastern Laboratories

12 3 4 5

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